data sheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1140 aug. 2012 rev. 1.2 bcd semiconductor manufacturing limited 1 general description bcd itvs (integrated transient voltage suppression) devices are designed and built using bcd proprietary process technology. these devices integrate the various diodes, transistors and resistors into the bcd itvs products. these diodes and transistors feature low parasitic resistance and the diodes also exhibit low capacitance. using these devices, bcd is able to design voltage clamping products where low capacitance associated with low dynamic resistance is required. the bcd at1140 is a general purpose, high performance device suitable for protecting four high speed i/os. these devices are assembled in dfn packages for operation at higher frequencies minimizing distortion to the lines being protected. the at1140 is available in the dfn-2.51.0-10 package. this package allows simple and optimal placement in existing hi gh-speed pcb layouts. features ? clamping voltage: 11.5v at 20a 100ns, tlp ? 10.5v at 6a 8 s/20 s ? iec 61000-4-2: +24kv, -18kv (air) ? iec 61000-4-2: +20kv, -16kv (contact) ? iec 61000-4-5 (lightning, 8 s/20 s): 6a ? input capacitance from i/o to vss: 0.5pf ? tlp dynamic resistance: 0.25 ? ? monolithic silicon technology applications ? dvi ? ethernet port: 10/100/1000 mb/s ? hdmi 1.3, high definition multi media ? ieee 1394 to 3.2gb/s ? mddi ? pci express ? sata /esata ? usb 2.0 to 480 mhz pin configuration dn package (dfn-2.51.0-10) figure 1. pin configuration of at1140 (top view)
data sheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1140 aug. 2012 rev. 1.2 bcd semiconductor manufacturing limited 2 circuit diagram figure 2. circuit diagram of at1140 ordering information at1140 a - a circuit type package dn: dfn-2.5 1.0-10 package temperature range part number marking id packing type dfn-2.5 1.0-10 -55 to 85c at1140dn-5.0trg1 bgb tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. g1: green tr: tape & reel 5.0: fixed output 5.0v
data sheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1140 aug. 2012 rev. 1.2 bcd semiconductor manufacturing limited 3 absolute maximum ratings (note 1) parameter symbol min typ max unit peak pulse current (tp 8 s/20 s) 8 a peak pulse power (tp 8 s/20 s) 75 w operating voltage (dc) -0.5 6 v iec61000-4-2 esd (air) -18 24 kv iec61000-4-2 esd (contact) -16 20 kv iec61000-4-5 (lightning) 6 a 75 w lead temperature (soldering, 10sec) t lead 260 oc operating temperature -55 85 oc storage temperature -55 150 oc note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. electrical characteristics t a =25oc, unless otherwise specified. parameter symbol conditions min typ max unit working voltage, i/o to vss -0.7 5.5 v channel leakage current i r operating voltage 0.5 a reverse breakdown voltage v br at 1ma 5.5 v holding voltage v h 5.5 v clamping voltage (surge) (iec61000-4-5) at 6a 10.5 v trigger voltage v trig 9.5 v esd clamping voltage at 20a, tlp, 100ns 11.5 v dynamic reverse resistance r diff-r 0.25 0.3 dynamic forward resistance r diff-f 0.25 channel input capacitance (i/o to vss) c i/o v i/o =2.5v, v ss =0v, f=1mhz 0.5 0.65 pf
data sheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1140 aug. 2012 rev. 1.2 bcd semiconductor manufacturing limited 4 typical performance characteristics t a =25c, unless otherwise specified. figure 3. bv, trigger voltage, holding volt age figure 4. current from i/o to vss vs. temperature vs. voltage from i/o to vss figure 5. clamping voltage figure 6. waveform of i/o to vss (positive) vs. current from i/o to vss (8 s/20 s) v clamping =10.2v 2v/div current waveform, (surge, 8x20 s, i pp =5.9a) 2a/div time 10 s/div 0123456789101112 0 2 4 6 8 10 12 14 16 18 20 22 current from i/o to vss (a) voltage from i/o to vss (v) -60 -40 -20 0 20 40 60 80 100 120 140 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 bv, trigger voltage, holding voltage (v) temperature ( o c) bv v trig v h 1234567 6 7 8 9 10 11 clamping voltage (v) current from i/o to vss (8 s/20 s) (a) iec 61000-4-5 (lightning)
data sheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1140 aug. 2012 rev. 1.2 bcd semiconductor manufacturing limited 5 typical performance characteristics (continued) t a =25c, unless otherwise specified. figure 7. input capacitance vs. input voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 input capacitance (pf) input voltage (v) f=1mhz, t a =25 o c
data sheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1140 aug. 2012 rev. 1.2 bcd semiconductor manufacturing limited 6 mechanical dimensions dfn-2.51.0-10 unit: mm(inch) m i n mm(inch) max
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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